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| Fig. 1. Schema of proposed structure of solar cell. A- Nanotecsturized front electrode, B- Amorphous silicon film with homogeneous placed nanocrystals, C- a-Si:H/a-Ge:H or a-Si:H/μc-Si:H quantum wells, scalling problem, D - Back electrode in a form of Bragg mirror and Lambertian reflection, E - Photon from radiant recombination reflected from back electrode "D", F - Not absorbed photons reflected from back electrode. | Fig. 1. Schema of proposed structure of solar cell. A- Nanotecsturized front electrode, B- Amorphous silicon film with homogeneous placed nanocrystals, C- a-Si:H/a-Ge:H or a-Si:H/μc-Si:H quantum wells, scalling problem, D - Back electrode in a form of Bragg mirror and Lambertian reflection, E - Photon from radiant recombination reflected from back electrode "D", F - Not absorbed photons reflected from back electrode. | ||
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| A - start from standart surface texturization, then creation by "sol-gel" process surface nanostructure in the area of the front electrode.It definitely increaes multi electron-hole pair generation ,if- low resistance electrode will be additionally preserving.Next, increasing field intensity in the active i-a-Si:H region gives better charge separation | A - start from standart surface texturization, then creation by "sol-gel" process surface nanostructure in the area of the front electrode.It definitely increaes multi electron-hole pair generation ,if- low resistance electrode will be additionally preserving.Next, increasing field intensity in the active i-a-Si:H region gives better charge separation | ||
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| B - fabrication of amorphous silicon layer with homogeneous Si nano crystals (size with respect to Gauss statistics about 5nm) characterizing with increased absorption as result of multiexciton generation of energetic phonons | B - fabrication of amorphous silicon layer with homogeneous Si nano crystals (size with respect to Gauss statistics about 5nm) characterizing with increased absorption as result of multiexciton generation of energetic phonons | ||
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| C - systems of about 300 quantum wells exploitative multilayer configuration ,based on a-Si:H/μc-Si:H or a-Si:H/a-SiGe:H (the size : Gauss Statistics around 5nm) that increase efficiency with respect of better effective absorption and separation of charge. | C - systems of about 300 quantum wells exploitative multilayer configuration ,based on a-Si:H/μc-Si:H or a-Si:H/a-SiGe:H (the size : Gauss Statistics around 5nm) that increase efficiency with respect of better effective absorption and separation of charge. | ||
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| D - fabrication by RF PECVD and RMS processes effective Al/Ag/ZnO mirror with adequately calculated thicknesses and transition to multilayer process . Fabrication of Bragg and Lambertian type mirror back electrode with low absorbtion of the light that passes the wells or is created in solar cell structure (E and F) | D - fabrication by RF PECVD and RMS processes effective Al/Ag/ZnO mirror with adequately calculated thicknesses and transition to multilayer process . Fabrication of Bragg and Lambertian type mirror back electrode with low absorbtion of the light that passes the wells or is created in solar cell structure (E and F) | ||
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| These solutions go into the dimensions, which are considered to be quantum, i.e. from 1 to 20nm aimed on size of 5nm, near at tunnel currents and resonance absorption emerge related with appearance of additional conductance band and multiband absorption of highly energetic photons. | These solutions go into the dimensions, which are considered to be quantum, i.e. from 1 to 20nm aimed on size of 5nm, near at tunnel currents and resonance absorption emerge related with appearance of additional conductance band and multiband absorption of highly energetic photons. | ||
