en:science:roadmapri [ASISEMI]

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====== Roadmap for research infrastructure ======


===== General =====

Photovoltaics and photonics, network of sensors base on TFT, intelligent sensors, x-ray and nuclear silicon detectors. Design, fabrication, analysis and testing of circuits and nano and microsystems.

==== Directions ====

  * Laboratory of Thin-Film Semiconductor Structures and Solar Cells a.o. with clean room  and RF PECVD System(New Building)
  * Technology of multilayer semiconductor structures base on silicone and germanium films. Optoelectronic measurements inclusive of: Light and Dark I-V-C-T characterizations with 10-15A resolution, Quantum Efficiency of the Structures (among others such as thin-film transistors and tandem-type silicone batteries),Uv-Vis-Ir, AFM,X-ray etc...
  * Theoretical Modeling of TFTs and Solar Cells. Light Confining in Solar Cells(Front TCO and Back Mirror Electrodes, Nanostructurisation)
  * One Dimensional Quantum Structures(5nm) Amorphous Silicone/Nanocrystallised Silicone and Scaling Problems for RF PECVD and Sputtering Technology

==== Direct Goal ====
 
 The investigations are foreseen in two stages:
  * until year 2012 providing additional equipment to laboratory and mastering technology of quantum multilayer structures and maintain problems of scalability. Cooperation mainly with Polish Institutes. 
  * till year 2015 fabrication of quantum solar cell structures as shown on figure 1. Cooperation on EU level.
The goal of this project is to verify of new solar cell structure (A,B,C,D) schematically shown on figure 1.
As to authors experience A,B and D propositions can be realized. 


{{ :en:science:studnie_kwantowe.jpg }}
Fig. 1. Schema of proposed structure of solar cell. A- Nanotecsturized front electrode, B- Amorphous silicon film with homogeneous placed nanocrystals, C- a-Si:H/a-Ge:H or a-Si:H/μc-Si:H quantum wells, scalling problem, D - Back electrode in a form of Bragg mirror and Lambertian reflection, E - Photon from radiant recombination reflected from back electrode "D", F - Not absorbed photons reflected from back electrode.

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A - start from standart surface texturization, then creation by "sol-gel" process surface nanostructure in the area of the front electrode.It definitely increaes multi electron-hole pair generation ,if- low resistance electrode will be additionally preserving.Next,  increasing field intensity in the active i-a-Si:H region   gives better charge separation

B - fabrication of amorphous silicon layer with homogeneous Si nano crystals (size with respect to Gauss statistics about 5nm) characterizing with increased absorption as result  of multiexciton generation of energetic phonons

C - systems of about 300 quantum wells exploitative multilayer configuration ,based on a-Si:H/μc-Si:H or a-Si:H/a-SiGe:H (the size : Gauss Statistics around 5nm) that increase efficiency with respect of better effective absorption and separation of charge. 

D - fabrication by RF PECVD and RMS processes effective Al/Ag/ZnO mirror with adequately calculated thicknesses and  transition to multilayer process . Fabrication of Bragg and Lambertian type mirror back electrode with low absorbtion of the light  that passes  the wells or is created in solar cell structure (E and F)  

These solutions go into the dimensions, which are considered to be quantum, i.e. from 1 to 20nm aimed on size of 5nm, near at tunnel currents and resonance absorption emerge related with appearance of additional conductance band and multiband absorption of highly energetic photons.